Study of normally-off AlGaN/GaN HEMTs with recessed p-GaN gate

Yuzhen Ma; Yue Liu; Yanli Liu; Hui Shen; Xiaolin Hu

doi:10.1117/12.3025448

28 February 2024 Study of normally-off AlGaN/GaN HEMTs with recessed p-GaN gate

Yuzhen Ma, Yue Liu, Yanli Liu, Hui Shen, Xiaolin Hu

Proceedings Volume 13071, International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023); 1307147 (2024) https://doi.org/10.1117/12.3025448
Event: International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023), 2023, Shenyang, China

Abstract

This article presents a comprehensive simulation analysis of a normally-off AlGaN/GaN HEMT with recessed p-GaN gate. Based on a conventional p-GaN HEMT, the structure of the device is achieved by selectively etching the AlGaN barrier layer beneath the gate and depositing a p-GaN cap layer. The TCAD tool was used to analyze transfer characteristics, output characteristics, transconductance, and breakdown voltage of the device. Besides, the large-signal power performance was also studied. The results indicate that the normally-off HEMT exhibits great performance with a threshold voltage of 2.7 V, saturation drain current at 1.52 A/mm, peak transconductance reaching 326 mS/mm, and a breakdown voltage of 610 V. When the device is driven with large-signal operation at the gate, the output power and power output efficiency increase with the increasing input power, while the power gain decreases.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yuzhen Ma, Yue Liu, Yanli Liu, Hui Shen, and Xiaolin Hu "Study of normally-off AlGaN/GaN HEMTs with recessed p-GaN gate", Proc. SPIE 13071, International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023), 1307147 (28 February 2024); https://doi.org/10.1117/12.3025448

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