|
In this work, based on the easy sublimation characteristics of iodine, we chose iodine vapor as the gas phase dopant. Metal oxide thin-film transistors (TFTs) are widely studied and applied due to their high mobility, high transmittance, and good stability. Based on the advantages of low temperature, low cost, and large area film formation of solution method, this preparation method has been widely used in the research of metal oxide films in recent years. However, the crystallinity of metal oxide thin films prepared by the solution method is poor and there are many internal defects, which leads to the phenomenon of high off-state current and low current switching in TFTs. Therefore, research on improving the performance of metal oxide TFTs prepared by solution method is of great significance in promoting the development of the new generation of display technology. In this study, we reported the effect of iodine doping on the electrical performance of indium zinc oxide (IZO) TFTs. To investigate the effect of iodine vapor phase doping on device performance, an IZO semiconductor layer was prepared by spin coating method on Si/SiNx substrate and TFTs were prepared using aluminum (Al) as the metal electrode. The results show that IZO TFT after iodine doping the current of the device is reduced and the field effect mobility is also reduced. With the increase in doping time threshold voltage is gradually shifted to a positive direction and the subthreshold swing is improved. The effect produced by gas phase doping of iodine on the electrical characteristics of the device reaches its maximum at a doping time of 100s. The results indicate that iodine vapor phase doping technology can improve and adjust the electrical conductivity and threshold voltage of IZO TFTs.
|
