Light emission and lasing in organic semiconductor-incorporated perovskite (OSiP)

Letian Dou

doi:10.1117/12.3027556

30 September 2024 Light emission and lasing in organic semiconductor-incorporated perovskite (OSiP)

Letian Dou

Proceedings Volume 13122, Organic and Hybrid Light Emitting Materials and Devices XXVIII; 131220B (2024) https://doi.org/10.1117/12.3027556
Event: Organic Photonics + Electronics, 2024, San Diego, California, United States

Abstract

Halide perovskites are exciting new semiconductors that show a great promise in low cost and high-performance optoelectronics devices. However, the poor stability is limiting their practical use. In this talk, I will present a molecular approach to the synthesis of a new family of hybrid material – Organic Semiconductor-incorporated Perovskite (OSiP). Energy transfer and charge transfer between adjacent organic and inorganic layers are extremely fast and efficient, owing to the atomically flat interface and short interlayer distance. In addition, the rigid conjugated ligand design dramatically enhances their chemical stability, suppresses solid-state ion diffusion, and modulates electron-phonon coupling, making them useful in many applications, particularly solid-state lighting. Using these stable hybrid materials, we demonstrate efficient light emission and amplification in single crystalline nanostructures, epitaxial heterostructures, and polycrystalline thin films.

Conference Presentation

Citation Download Citation

Letian Dou "Light emission and lasing in organic semiconductor-incorporated perovskite (OSiP)", Proc. SPIE 13122, Organic and Hybrid Light Emitting Materials and Devices XXVIII, 131220B (30 September 2024); https://doi.org/10.1117/12.3027556

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