A reference source for use in the SOI RF process

Rong Jin; Wei Yang; Bin Qing; Yongshan Hu; Shunmin Wu; Tianting Zhao; Yidong Yuan

doi:10.1117/12.3038291

5 August 2024 A reference source for use in the SOI RF process

Rong Jin, Wei Yang, Bin Qing, Yongshan Hu, Shunmin Wu, Tianting Zhao, Yidong Yuan

Proceedings Volume 13226, Third International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2024); 132264S (2024) https://doi.org/10.1117/12.3038291
Event: 3rd International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2024), 2024, Changsha, China

Abstract

Based on the 0.13um SOI RF process platform, the circuit uses neither pnp nor npn. However,for RF circuit, the basic IP of voltage reference source and current reference source with zero temperature coefficient is required. Because the environment’s temperature is changing, but as a benchmark, it needs to change nothing or very little with the temperature. In this paper, a voltage reference source and current reference source with zero temperature coefficient is designed by using the diode source of the process platform. We analysed the temperature characteristics of diode, cleverly extracted the positive and negative temperature characteristics of the characteristics, and synthesized the zero temperature characteristics. Its zero-temperature characteristics have been shown by calculation and simulation. Provide a design reference for the voltage reference source and the current reference source with zero temperature coefficient of the process platform or a similar process platform.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Rong Jin, Wei Yang, Bin Qing, Yongshan Hu, Shunmin Wu, Tianting Zhao, and Yidong Yuan "A reference source for use in the SOI RF process", Proc. SPIE 13226, Third International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2024), 132264S (5 August 2024); https://doi.org/10.1117/12.3038291

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