Paper
6 September 1978 Photomask Dimensional Measurements And The Clear/Dark Ratio
Jeremy Nichols
Author Affiliations +
Abstract
Four line-width measuring systems were tested for variations in the measured width of identical resolution targets as a function of the clear-to-dark (C/D) ratio of the surrounding field. Test masks were made of resolution bars in a checkerboard field. The C/D ratio of this field was varied on each mask to create eleven samples per mask with C/D ratios from 0% to 100%. Photocomposition was used to ensure that the C/D ratio of the field did not disturb the dimensions of the resolution bars during manufacture. Thus, any dimensional variations from sample to sample were due to effects of the C/D ratio on the measurement process. This was verified in a scanning electron microscope. Masks produced in both chromium oxide and iron oxide were measured on an image-shearing system, a photometric system, and on two different TV-type systems. One TV-type system was affected by the C/D ratio. This system was tested further to determine the cause of the problem. A method of minimizing the problem was determined.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeremy Nichols "Photomask Dimensional Measurements And The Clear/Dark Ratio", Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); https://doi.org/10.1117/12.956120
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Chromium

Photomasks

Opacity

Oxides

Iron

Image processing

Scanning electron microscopy

RELATED CONTENT


Back to Top