Resonant tunneling in microcrystalline silicon quantum box diode

Raphael Tsu; Qui-Yi Ye; Edward H. Nicollian

doi:10.1117/12.24358

1 March 1991 Resonant tunneling in microcrystalline silicon quantum box diode

Raphael Tsu, Qui-Yi Ye, Edward H. Nicollian

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24358
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

STRACT Resonant tunneling in threedimensionally quantum confined (3DQC) microcrystalline silicon surrounded by amorphousSi02(aSiO barriers is experimentally observed. Unlike quantum confinement in lower dimenstons charge accumulation in 3DQC silicon box results in large shifts of the discrete energy states with conductancegate voltage measurements.

Citation Download Citation

Raphael Tsu, Qui-Yi Ye, and Edward H. Nicollian "Resonant tunneling in microcrystalline silicon quantum box diode", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24358

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