Excited state cross sections for Er-doped glasses

Stanley A. Zemon; Gary M. Lambert; William J. Miniscalco; Richard W. Davies; Bruce T. Hall; Robert C. Folweiler; Ta-Sheng Wei; Leonard J. Andrews; Mahendra P. Singh

doi:10.1117/12.24926

1 January 1991 Excited state cross sections for Er-doped glasses

Stanley A. Zemon, Gary M. Lambert, William J. Miniscalco, Richard W. Davies, Bruce T. Hall, Robert C. Folweiler, Ta-Sheng Wei, Leonard J. Andrews, Mahendra P. Singh

Author Affiliations +

Proceedings Volume 1373, Fiber Laser Sources and Amplifiers II; (1991) https://doi.org/10.1117/12.24926
Event: SPIE Microelectronic Interconnect and Integrated Processing Symposium, 1990, San Jose, United States

Abstract

Excited-state-absorption (ESA) cross sections were determined for the region between 760 and 900 nm for Er-doped fluorophosphate phosphate and silicate glasses. Measurements were performed on multimode fibers pumping at 647 nm with powers 1 . 5 Wto invert the population into the saturation regime. Over much of the 800-nm band ground-state-absorption (GSA) cross sections are equal to or greater than ESA cross sections. For comparison ESA was also measured for singlemode Al/P-doped silica fiber. The cross sections were incorporated into an amplifier model and the phosphate and fluorophosphate glasses were found to provide higher gain than silica for pumping in the 800-nm band. Photoexcited fluorozirconates were found to have substantial populations in the first four excited states and ESA transitions originating from these states are identified.

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Stanley A. Zemon, Gary M. Lambert, William J. Miniscalco, Richard W. Davies, Bruce T. Hall, Robert C. Folweiler, Ta-Sheng Wei, Leonard J. Andrews, and Mahendra P. Singh "Excited state cross sections for Er-doped glasses", Proc. SPIE 1373, Fiber Laser Sources and Amplifiers II, (1 January 1991); https://doi.org/10.1117/12.24926

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