Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition

James C. Sturm; P. V. Schwartz; Erwin J. Prinz; Charles W. Magee

doi:10.1117/12.25710

1 April 1991 Control of oxygen incorporation and lifetime measurement in Si_1-xGe_x epitaxial films grown by rapid thermal chemical vapor deposition

James C. Sturm, P. V. Schwartz, Erwin J. Prinz, Charles W. Magee

Author Affiliations +

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25710
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Oxygen levels in epitaxial Sii_Ge films grown by rapid thermal chemical vapor deposition (RTCVD) have been reduced to under 2 x 1018 cm3 and the source of oxygen in films with higher oxygen concentration has been identified. Films with low oxygen levels have minority carrier lifetimes in the us range and Si/Sii_Ge/Si heterojunction bipolar transistors (BET''s) fabricated with low oxygen levels have near-ideal base currents which do not depend on the base composition.

Citation Download Citation

James C. Sturm, P. V. Schwartz, Erwin J. Prinz, and Charles W. Magee "Control of oxygen incorporation and lifetime measurement in Si_1-xGe_x epitaxial films grown by rapid thermal chemical vapor deposition", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25710

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