Silicon nitride film formed by NH3 plasma-enhanced thermal nitridation

Zhi Guang Gu; Bing-Zong Li

doi:10.1117/12.47211

1 November 1991 Silicon nitride film formed by NH₃ plasma-enhanced thermal nitridation

Zhi Guang Gu, Bing-Zong Li

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47211
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Recently, with the rapid development of VLSI microelectronics, the device dimension is reduced to micron and submicron range. The thickness of the dielectric film is reduced to 10 nm. The very thin SiO₂ often shows high leakage current, low breakdown voltage, poor capability of resisting the penetration of impurities, and instable physical properties. It is one of the important subjects of semiconductor microelectronics technology to improve the properties of the SiO₂ used in fabrication of VLSI devices. In this work, an NH₃ plasma enhanced thermal nitridation (NPTN) technique is investigated to improve the quality of thin dielectric films.

Citation Download Citation

Zhi Guang Gu and Bing-Zong Li "Silicon nitride film formed by NH₃ plasma-enhanced thermal nitridation", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47211

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