Paper
1 November 1991 Temperature dependence of resistance of diamond film synthesized by microwave plasma CVD
Bangchao Yang, Li Gou, Yu Ming Jia, Junguo Ran, Changqiong Zheng, Xia Tang
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47249
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Diamond has many excellent properties, such as the greatest hardness (10000 kg/mm2), high thermal conductivity (5 times that of Copper at 20 degree(s)C), wide energy gap (5.5 eV), good chemical stability, etc. But for a long time, the shape and the high cost of diamond made by high-pressure, high-temperature method severely limit the application of the diamond in electronics and optics. Since the diamond film was synthesized, people began to study further the properties of the diamond film. It is expected to be a new kind of function material. This is a report of the temperature dependence of the resistance of the diamond film. The authors also attempted to prepare the thermistor made of polycrystal diamond film on silicon substrate.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bangchao Yang, Li Gou, Yu Ming Jia, Junguo Ran, Changqiong Zheng, and Xia Tang "Temperature dependence of resistance of diamond film synthesized by microwave plasma CVD", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47249
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KEYWORDS
Diamond

Resistance

Temperature metrology

Electrodes

Microwave radiation

Plasma

Silicon films

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