Some aspects of CdTe

Shyam Singh

doi:10.1117/12.56999

1 February 1992 Some aspects of CdTe

Shyam Singh

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56999
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

This article mainly deals with the exact origin of 0.15 - 0.20 eV defect level in CdTe--a controversial issue under debate for more than three decades--and some investigations of deep and interface levels in polycrystalline n-CdTe. The first issue still stands unresolved amidst conflicting views from various workers, thereby leaving it surrounded by an air of uncertainty. The results of a study of deep and interface states in Mo-polycrystalline n-Schottky barriers using a deep level spectrometer DLS-82E (Hungary), both in differential DLTS and level profile mode, are also presented. Three deep levels with activation energies of 0.2, 0.43 and 0.65 eV and capture cross-section of the order of 10^-18 cm² detected in the bulk of layers are discussed.

Citation Download Citation

Shyam Singh "Some aspects of CdTe", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56999

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