Long-wave infrared detectors based on III-V materials

Joseph L. Maserjian

doi:10.1117/12.48723

1 December 1991 Long-wave infrared detectors based on III-V materials

Joseph L. Maserjian

Proceedings Volume 1540, Infrared Technology XVII; (1991) https://doi.org/10.1117/12.48723
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Future NASA missions for earth observation and planetary science require large photovoltaic detector arrays with high performance in the long wavelength region to 18 microns and at operating temperatures above 65 K where single-cycle long-life cryocoolers are being developed. Since these detector array requirements exceed the state of current HgCdTe technology, alternative detector materials are being investigated as a possible option for future missions. Advanced growth techniques (e.g., MBE and MOCVD) of column III-V semiconductors have opened opportunities for engineering new detector materials and device structures. The technical approaches under investigation at JPL (with university and industry participation) include: quantum well infrared photodetectors, heterojunction internal photoemission (HIP) photodetectors, type-II strained layer superlattices, and nipi doping superlattices. Each of these options are briefly described with some of their pros and cons. A more detailed description is given for the HIP approach being pioneered at JPL.

Citation Download Citation

Joseph L. Maserjian "Long-wave infrared detectors based on III-V materials", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); https://doi.org/10.1117/12.48723

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