Holographic diffraction gratings on the base of chalcogenide semiconductors

Ivan Z. Indutnyi; Igor Iosifovitc Robur; Peter F. Romanenko; Alexander V. Stronski

doi:10.1117/12.50649

1 December 1991 Holographic diffraction gratings on the base of chalcogenide semiconductors

Ivan Z. Indutnyi, Igor Iosifovitc Robur, Peter F. Romanenko, Alexander V. Stronski

Proceedings Volume 1555, Computer and Optically Generated Holographic Optics; 4th in a Series; (1991) https://doi.org/10.1117/12.50649
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Results of the investigations of holographic diffraction grating (with spatial frequencies from 600 to 3600 mm^-I) production processes on the thin- film light-sensitive systems As₂S₃-Ag,As₂Se₃-Ag,GeSe₂-Ag and thin film layers As₂S₃,As₂Se₃ and GeSe₂ are presented in this report. Experimental investigations and model calculations of relief formation processes on such resist media were carried out. The possibility of composite relief production in chalcogenide vitreous semiconductor (ChVS) metal structures with the help of photodoping and photostimulated solubility changes in ChVS is shown. Diffraction efficiency η dependencies from exposition, wavelength, developing conditions, and additional uniform exposure were investigated. Ways of optimizing such parameters are shown. The η spectral and angular dependencies of the gratings were studied, and results of electronmicroscopic groove profile investigations are presented. Holographic gratings with 70 - 85% efficiency for polarized light and stray light level approximately 10^-6 were produced.

Citation Download Citation

Ivan Z. Indutnyi, Igor Iosifovitc Robur, Peter F. Romanenko, and Alexander V. Stronski "Holographic diffraction gratings on the base of chalcogenide semiconductors", Proc. SPIE 1555, Computer and Optically Generated Holographic Optics; 4th in a Series, (1 December 1991); https://doi.org/10.1117/12.50649

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