Paper
1 March 1992 Infrared emission of radio-frequency-excited (N2 + SiH4) discharge by high-resolution Fourier transform spectroscopy
Mohammed Elhanine, Robert Farrenq, Guy Guelachvili
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Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56353
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany
Abstract
Infrared emission of a gas mixture of N2 and SiH4 activated by radio frequency discharge has been analyzed using high resolution Fourier transform information. In addition to the several electronic bands of N2, signatures of three transient species--namely, NH, SiN and SiNH--have already been identified. For iminosilicon SiNH this is the first gas phase spectroscopic observation. Molecular parameters have been derived with a high accuracy. For nitride silicon, radical new A2$PI - X2(Sigma) bands have been observed. These data have been combined with other available information in order to improve molecular structure.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohammed Elhanine, Robert Farrenq, and Guy Guelachvili "Infrared emission of radio-frequency-excited (N2 + SiH4) discharge by high-resolution Fourier transform spectroscopy", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); https://doi.org/10.1117/12.56353
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KEYWORDS
Fourier transforms

Spectroscopy

Infrared radiation

Fourier spectroscopy

Infrared spectroscopy

Molecules

Silicon

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