Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5um spectral range

Maya P. Mikhailova; Igor A. Andreev; Alexej N. Baranov; S. V. Mel'nikov; Yulia P. Smorchkova; Yury P. Yakovlev

doi:10.1117/12.135386

1 February 1992 Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5μm spectral range

Maya P. Mikhailova, Igor A. Andreev, Alexej N. Baranov, S. V. Mel'nikov, Yulia P. Smorchkova, Yury P. Yakovlev

Proceedings Volume 1580, Fiber Optic Components and Reliability; (1992) https://doi.org/10.1117/12.135386
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

GalnAsSb/GaAlAsSb SAM APDs were fabricated and investigated. The GaAlAsSb solid solution of the "resonant" composition (x=0.04, Eg = ?0 ) was used in the multiplication region of the devices. Large ionization rate ratio (?/? =60) and low excess noise factor ( F=Mf f=0.2) was experimentally observed.

Citation Download Citation

Maya P. Mikhailova, Igor A. Andreev, Alexej N. Baranov, S. V. Mel'nikov, Yulia P. Smorchkova, and Yury P. Yakovlev "Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5μm spectral range", Proc. SPIE 1580, Fiber Optic Components and Reliability, (1 February 1992); https://doi.org/10.1117/12.135386

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