Mathematical model of the plasma etching of resists containing silicon

Dan V. Nicolau; Gheorghita Jinescu; Florin Fulga; Mircea V. Dusa

doi:10.1117/12.56916

1 February 1992 Mathematical model of the plasma etching of resists containing silicon

Dan V. Nicolau, Gheorghita Jinescu, Florin Fulga, Mircea V. Dusa

Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56916
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

The paper deals with the simulation of the etching step of resists containing silicon, Hith special attention on DESIRE technology, for which purpose a general mathematical model is built which emphasizes the role of the gas-solid reaction at the interface plasma/polymer. Some preliminary simulation results are presented.

Citation Download Citation

Dan V. Nicolau, Gheorghita Jinescu, Florin Fulga, and Mircea V. Dusa "Mathematical model of the plasma etching of resists containing silicon", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56916

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