High-power single-frequency 980-nm diode lasers

Robert B. Lauer

doi:10.1117/12.59145

26 June 1992 High-power single-frequency 980-nm diode lasers

Robert B. Lauer

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59145
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

The design, fabrication, and characteristics of high power 980 nm strained layer lasers will be described in detail. These lnGaAs/GaAs ridge waveguide lasers show excellent optical beam quality with total fundamental mode powers of approximately 200 mW. Cavity losses are less than 3 cm¹ , and internal efficiencies approach 1 00%. Single frequency operation is typically observed for these lasers, and side mode suppression ratios of 30 dB and linewidths of 2 MHz are common.

Citation Download Citation

Robert B. Lauer "High-power single-frequency 980-nm diode lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59145

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