Picosecond photoluminescence of a-Si:H/a-SiNx:H multilayers

Xu Guang Huang; He Zhou Wang; Qingxing Li; Zhenxin Yu

doi:10.1117/12.59299

14 May 1992 Picosecond photoluminescence of a-Si:H/a-SiN_x:H multilayers

Xu Guang Huang, He Zhou Wang, Qingxing Li, Zhenxin Yu

Proceedings Volume 1636, Applied Spectroscopy in Materials Science II; (1992) https://doi.org/10.1117/12.59299
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

The dynamics of the carrier recombination in a-Si:H/a-SiN₃:H multilayers has been investigated with picosecond photoluminescence spectroscopy. The thermalization of photogenerated carriers is a direct hopping process. The decay time cutoff, the mobility edge and the bandtail width vary non-monotonously with a turning point near x=O.85, which is attributed to the changes of the build-in field and the multilayer structure with nitrogen content.

Citation Download Citation

Xu Guang Huang, He Zhou Wang, Qingxing Li, and Zhenxin Yu "Picosecond photoluminescence of a-Si:H/a-SiN_x:H multilayers", Proc. SPIE 1636, Applied Spectroscopy in Materials Science II, (14 May 1992); https://doi.org/10.1117/12.59299

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