Paper
12 August 1992 Back-illuminated 2048 x 2048 charge-coupled device performance
Kristie Werner Gladhill, Morley Blouke, Pauline Marriott, Thomas G. Houck, Brian L. Corrie, Harry H. Marsh
Author Affiliations +
Proceedings Volume 1656, High-Resolution Sensors and Hybrid Systems; (1992) https://doi.org/10.1117/12.135933
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States
Abstract
This paper will discuss recent performance of the back illuminated 2048 x 2048 imaging array device. The TK2048E chargecoupled device (CCD) full frame imnager is a three phase polysilicon gate buried channel device utilizing mini channel and multi-pinned phase technology. Physical structure allows simultaneous readout of each 1024 x 1024 quadrant or read out of the entire array through any one of four identical output NOSFETs. Test results for noise gain dark current charge transfer efficiency full well dark and hot defects quantum efficiency and imaging will be reviewed. 1.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kristie Werner Gladhill, Morley Blouke, Pauline Marriott, Thomas G. Houck, Brian L. Corrie, and Harry H. Marsh "Back-illuminated 2048 x 2048 charge-coupled device performance", Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); https://doi.org/10.1117/12.135933
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KEYWORDS
Quantum efficiency

Silicon

Back illuminated sensors

Charge-coupled devices

Electrons

Sensors

Semiconducting wafers

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