Electrical resistance measurements for full-field lens characterization

Elliott Sean Capsuto; Andrew Michael Lowen; Jim Dadashev; Joseph C. Pellegrini

doi:10.1117/12.59800

1 June 1992 Electrical resistance measurements for full-field lens characterization

Elliott Sean Capsuto, Andrew Michael Lowen, Jim Dadashev, Joseph C. Pellegrini

Proceedings Volume 1673, Integrated Circuit Metrology, Inspection, and Process Control VI; (1992) https://doi.org/10.1117/12.59800
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

Lens performance parameters have been traditionally described using terms such as resolution, astigmatism, field curvature, proximity effects, and distortion. However, with decreasing geometries, decreasing exposure wavelengths and tighter bandwidths (such as 248 nm excimer laser lithography), lens characterization in terms of depth of focus (DOF) and exposure latitudes for the entire lens becomes more critical. The challenge is to define a focus and exposure setting that allows one to operate in the `common corridor.' `Common corridor' is defined as the resulting focus-exposure process window for the entire field of the lens encompassing all geometries of a specific line size. A modification to the MONO-LITH software package allows this calculation to be done quickly and easily.

Citation Download Citation

Elliott Sean Capsuto, Andrew Michael Lowen, Jim Dadashev, and Joseph C. Pellegrini "Electrical resistance measurements for full-field lens characterization", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59800

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