CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 1674 > Article
Paper
1 June 1992 Trend and limitation of process using the simulation and experimental method for phase-shift mask
Young-Mog Ham, YoungSik Kim, H. K. Oh, Dong-Jun Ahn, K. S. Oh
Author Affiliations +
Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130342
Event: Microlithography '92, 1992, San Jose, CA, United States
Abstract
Phase shift mask ( PSM ) is a useful technique to higher the resolution and focus margin in the lithography process with sub-half micron range, which is limited by currently used process tools. PSM with i-line stepper is one of the leading candidates for mass production of 64M Bit Dram. In this study, in order to obtain the information about the basic trend and process limitation of PSM, we evaluated the PSM technique by simulation and lithographic experiment. However several difficulties were encountered when attempting to use the PSM in real process. These difficulties were mainly due to the process margin and variation in munufacturing a real device. We simulated PSM by changing numerical aperture, patial coherence, focus, and pattern size for g-line and i-line. Intensity profiles of patterns were monitored for both conventional and phase shift mask ( alternating t>ye ). With those simulation results, we first analyzed the aerial image and studied the trend and limitation of PSM technology. Then we compared these results with experimental results of g-line and i-line process. Although the simulation and the experimental results showed that definable resolution limit and the resolution with depth of focus ( DOF ) margin were significantly increased by PSM technology, it was hard to control the process due to the errors occuring in manufacturing PSM. The study for resolution limit with marginal depth of focus led us to optimize the method how to approach the PSM from simulation. In addition, the process limitation and lithographic trend of PSM were investigated as well.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Young-Mog Ham, YoungSik Kim, H. K. Oh, Dong-Jun Ahn, and K. S. Oh "Trend and limitation of process using the simulation and experimental method for phase-shift mask", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130342
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 11 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Image processing
Photomasks
Optical lithography
Phase shifts
Lithium
Process control
Image analysis
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top