Spin relaxation dynamics of excitons and free carriers in quasi-two-dimensional GaAlAs/GaAs structures

Theodore C. Damen; Luis Vina; Karl Leo; John E. Cunningham; Jagdeep Shah; Lu Jeu Sham

doi:10.1117/12.137686

21 October 1992 Spin relaxation dynamics of excitons and free carriers in quasi-two-dimensional GaAlAs/GaAs structures

Theodore C. Damen, Luis Vina, Karl Leo, John E. Cunningham, Jagdeep Shah, Lu Jeu Sham

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137686
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We present the results of a comprehensive investigation of spin-relaxation processes of electrons, holes and excitons in quantum wells using subpicosecond spectroscopy of luminescence polarization. Spin relaxation rates of electrons and holes are measured directly in modulation-doped quantum wells and give a good understanding of spin-relaxation processes of electrons and holes. We show that spin-relaxation dynamics of excitons, on the other hand, is quite complicated and is strongly influenced by their formation dynamics, many-body effects and localization dynamics. Although we have made good progress towards understanding exciton spin relaxation processes, some other outstanding issues will require further attention. We compare our results to those in bulk GaAs, and those in quantum wells obtained by other techniques.

Citation Download Citation

Theodore C. Damen, Luis Vina, Karl Leo, John E. Cunningham, Jagdeep Shah, and Lu Jeu Sham "Spin relaxation dynamics of excitons and free carriers in quasi-two-dimensional GaAlAs/GaAs structures", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137686

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