Paper
3 September 1992 Modulation characteristics of short-cavity strained-layer lasers
Luke F. Lester, Sean S. O'Keefe, William J. Schaff, Lester Fuess Eastman
Author Affiliations +
Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137704
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
The low frequency response and damping behavior of four quantum well (4QW) graded-index separate confinement heterostructure (GRINSCH) and SCH strained-layer lasers are compared. The SCH laser is shown to be better in both respects due to a shorter carrier capture time into the quantum wells. A record 3-dB bandwidth of 28 GHz is reported for a 150 micrometers cavity length 4QW strained-layer SCH laser. The change in the differential gain, non-linear gain coefficient, and damping rate are studied as a function of the quantum well thickness and barrier height. It is found that decreasing the well thickness does not change the non-linear gain coefficient nor the differential gain appreciably in relatively deep wells. Shallower quantum wells, however, are observed to have lower differential gain and a higher damping rate.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luke F. Lester, Sean S. O'Keefe, William J. Schaff, and Lester Fuess Eastman "Modulation characteristics of short-cavity strained-layer lasers", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.137704
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KEYWORDS
Quantum wells

Gallium arsenide

Modulation

Hole burning spectroscopy

Heterojunctions

High speed electronics

Optoelectronics

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