Producibility of GaAs quantum-well infrared photodetector arrays

Barry F. Levine; Clyde G. Bethea; Venkat S. Swaminathan; J. W. Stayt Jr.; Ronald E. Leibenguth; Kenneth G. Glogovsky; William A. Gault

doi:10.1117/12.137769

12 August 1992 Producibility of GaAs quantum-well infrared photodetector arrays

Barry F. Levine, Clyde G. Bethea, Venkat S. Swaminathan, J. W. Stayt Jr., Ronald E. Leibenguth, Kenneth G. Glogovsky, William A. Gault

Author Affiliations +

Proceedings Volume 1683, Infrared Focal Plane Array Producibility and Related Materials; (1992) https://doi.org/10.1117/12.137769
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

We discuss in detail the producibility issues associated with GaAs/Al_xGa_1-xAs quantum well infrared photodetectors (QWIPs). Excellent uniformity in growth (thickness, doping, and Al concentration) and in processing are expected to lead to high yield, high performance large area infrared imaging arrays.

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Barry F. Levine, Clyde G. Bethea, Venkat S. Swaminathan, J. W. Stayt Jr., Ronald E. Leibenguth, Kenneth G. Glogovsky, and William A. Gault "Producibility of GaAs quantum-well infrared photodetector arrays", Proc. SPIE 1683, Infrared Focal Plane Array Producibility and Related Materials, (12 August 1992); https://doi.org/10.1117/12.137769

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