Paper
20 November 1992 Calculations of energy barriers to CVD diamond growth
Christopher D. Latham, Malcom I. Heggie, Bob Jones
Author Affiliations +
Abstract
The growth of thin diamond films by chemical vapor deposition currently in a painfully slow process with highly variable results depending on many experimental parameters. By computer modeling of processes at diamond surfaces using a local density functional cluster method, we have found substantial energy barriers (4 - 6 eV) to growth. Overall, the reactions are strongly exothermic though, thus making them irreversible. The results presented here focus on the addition of methyl radicals and acetylene molecules to {100} 2 X 1 reconstructed surfaces. We propose two possible diamond growth mechanisms in which the relatively weak reconstruction bonds have a crucial role.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher D. Latham, Malcom I. Heggie, and Bob Jones "Calculations of energy barriers to CVD diamond growth", Proc. SPIE 1759, Diamond Optics V, (20 November 1992); https://doi.org/10.1117/12.130768
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KEYWORDS
Diamond

Chemical species

Hydrogen

Carbon

Molecules

Chemical vapor deposition

Modeling

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