Nanolithography with metal halides

Heinrich M. Jaeger; H. R. Borsje; Sybrand Radelaar

doi:10.1117/12.130965

1 August 1992 Nanolithography with metal halides

Heinrich M. Jaeger, H. R. Borsje, Sybrand Radelaar

Proceedings Volume 1778, Imaging Technologies and Applications; (1992) https://doi.org/10.1117/12.130965
Event: Optical Engineering Midwest 1992, 1992, Chicago, IL, United States

Abstract

We have used AlF₃ as a negative electron beam resist and dry-etch mask for nanoscale device fabrication in both commercial beam writers and scanning (transmission) electron microscopes. Isolated features down to 15 nm have been made as well as square arrays of 20 nm dots-and-spaces.

Citation Download Citation

Heinrich M. Jaeger, H. R. Borsje, and Sybrand Radelaar "Nanolithography with metal halides", Proc. SPIE 1778, Imaging Technologies and Applications, (1 August 1992); https://doi.org/10.1117/12.130965

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