Advanced MESFET burn-in method and equipment

Balazs Kovacs; Imre Mojzes; Ferenc Csanyi

doi:10.1117/12.131060

1 August 1992 Advanced MESFET burn-in method and equipment

Balazs Kovacs, Imre Mojzes, Ferenc Csanyi

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131060
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

An advanced method was developed for MESFET burn-in purposes, based on preserving the samples in different stages of the degradation process, due to thermal and electrical stress, for subsequent structural investigations. This is performed by the automatic termination of the electrical stress separately on any device before its complete destruction. The equipment realizing this method is also described.

Citation Download Citation

Balazs Kovacs, Imre Mojzes, and Ferenc Csanyi "Advanced MESFET burn-in method and equipment", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131060

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