Control and characterization of semiconductor superlattices by grazing: incidence x-ray diffraction method

Rafik M. Imamov; O. G. Melikyan; Dmitry V. Novikov

doi:10.1117/12.131045

1 August 1992 Control and characterization of semiconductor superlattices by grazing: incidence x-ray diffraction method

Rafik M. Imamov, O. G. Melikyan, Dmitry V. Novikov

Author Affiliations +

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131045
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The report is dedicated to the application of grazing-incidence x-ray diffraction in the inclined Bragg-Laue geometry for investigation of semiconductor superlattices (SL). It is shown that it provides depth-resolved information on the SL structure and can be used for express control of SL parameters. A new x-ray spectrometer for surface structure characterization of semiconductor materials is presented.

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Rafik M. Imamov, O. G. Melikyan, and Dmitry V. Novikov "Control and characterization of semiconductor superlattices by grazing: incidence x-ray diffraction method", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131045

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