Electrical properties of Mg-doped GaAs and AlxGa1-xAs (x<=0.36)

L. Csontos; Balint Podor; K. Somogyi; L. Andor

doi:10.1117/12.131003

1 August 1992 Electrical properties of Mg-doped GaAs and Al_xGa_1-xAs (x≤0.36)

L. Csontos, Balint Podor, K. Somogyi, L. Andor

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131003
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Mg-doped GaAs and Al_xGa_1-xAs (x

Citation Download Citation

L. Csontos, Balint Podor, K. Somogyi, and L. Andor "Electrical properties of Mg-doped GaAs and Al_xGa_1-xAs (x≤0.36)", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131003

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