Radiation hardness of silicon dioxide dielectric strength in silicon MOS structures

Tomasz Brozek

doi:10.1117/12.131038

1 August 1992 Radiation hardness of silicon dioxide dielectric strength in silicon MOS structures

Tomasz Brozek

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131038
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The paper deals with the radiation hardness of the Si-SiO₂ system -- the basis of advanced MOS VLSI integrated circuits. While the radiation-induced behavior of such crucial Si-SiO₂ parameters as surface and oxide charges have been intensively investigated for many years, the radiation aspects of the dielectric strength of thin oxide films has not been investigated. This work describes experiments carried out in order to determine radiation hardness of silicon dioxide dielectric strength. The results show that the (gamma) -radiation does not change the oxide reliability parameters up to the dose of 10 Mrad. On the other hand, transient processes which pass before breakdown occurs are strongly affected in irradiated oxides. Radiation-induced changes can also be responsible for the annihilation and generation of high-field defects which affect the parameter distributions in the near-intrinsic range.

Citation Download Citation

Tomasz Brozek "Radiation hardness of silicon dioxide dielectric strength in silicon MOS structures", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131038

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