Role of metallization type in semi-insulating GaAs-based optoelectronic switches

Ferenc Riesz; Bela Szentpali; M. Nemeth-Sallay; M. Serenyi

doi:10.1117/12.131035

1 August 1992 Role of metallization type in semi-insulating GaAs-based optoelectronic switches

Ferenc Riesz, Bela Szentpali, M. Nemeth-Sallay, M. Serenyi

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131035
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Interdigitated planar photodetector structures were fabricated on semi-insulating GaAs material using ohmic-ohmic and Schottky-Schottky contacts. The dc and pulse response performance of the devices indicate that the devices with Schottky contacts are more suitable for high-speed photodetection and pulse generation. The differences between the two types of devices are interpreted with the difference in contact type, trapping mechanisms, and contact resistance effects.

Citation Download Citation

Ferenc Riesz, Bela Szentpali, M. Nemeth-Sallay, and M. Serenyi "Role of metallization type in semi-insulating GaAs-based optoelectronic switches", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131035

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