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A 1 micrometers gate GaAs MESFET designed for the lower X-band frequencies has been fabricated and characterized. A MOCVD-grown, Se-doped channel layer with 3900 cm2/Vs carrier mobility and a recessed gate structure resulted in a maximum device transconductance of 180 mS/mm. Transistor microwave performance was characterized by the measured gain of 8 dB and noise figure of 3.5 dB at 9.375 GHz. S-parameters measurements in the frequency range 1 divided by 12 GHz allowed for evaluation of small signal equivalent circuit parameters.
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