Optimally stable electron cyclotron resonance plasma generation for precise ULSI patterning

Seiji Samukawa

doi:10.1117/12.142921

16 April 1993 Optimally stable electron cyclotron resonance plasma generation for precise ULSI patterning

Seiji Samukawa

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142921
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

This paper discusses microwave absorption around the electron cyclotron resonance (ECR) region in relation to the magnetic field profiles and microwave conditions, and shows how to achieve stable, uniform, and efficient microwave absorption in an ECR plasma to prevent the instability. A high-performance multi-coil system and a new microwave introduction method developed for stable plasma generation are described. Experimental results show that sufficiently precise patterning suitable for practical use is achieved.

Citation Download Citation

Seiji Samukawa "Optimally stable electron cyclotron resonance plasma generation for precise ULSI patterning", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142921

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