Paper
12 July 1993 Results from proton damage tests on the Michelson Doppler Imager CCD for SOHO
Igor Zayer, Ira Chapman, Dexter W. Duncan, G. A. Kelly, Keith E. Mitchell
Author Affiliations +
Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148604
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States
Abstract
Protons from solar flares represent the major threat to the scientific performance of a CCD in the SOHO orbit at L1, decreasing CTE and thus non-uniformly degrading the MTF of the detector. Lattice damage assessment and prediction rely on accurate radiation damage experiments to 'calibrate' numerical simulations and modeling. The energy ranges where TRIM and NIEL represent valid models overlap around a few MeV. Thus, the proton beam from Lockheed PARL's 0.1 to 3 MeV Van de Graaff generator provides a convenient test facility. We present results from an accurate experiment using 2 MeV protons on the MDI detector (LORAL 1024 X 1024 21 micrometers 3P MPP CCD). A premiere feature in the experiment is the achievement of a stable, uniform low fluence and extremely accurate dosimetry at this relatively low energy. Pre- and post-radiation CTE measurements for our specific mode of operation (relatively fast readout rate of 500 kpix/s) is obtained using Fe55 method over a wide temperature range. They reveal somewhat unexpected results. The damage is more severe to parallel CTE than to serial CTE and the former worsens when cooled down to -50 degree(s)C, then improves when cooled further.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor Zayer, Ira Chapman, Dexter W. Duncan, G. A. Kelly, and Keith E. Mitchell "Results from proton damage tests on the Michelson Doppler Imager CCD for SOHO", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148604
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Cited by 10 scholarly publications.
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KEYWORDS
Charge-coupled devices

Aluminum

Sensors

Doppler effect

Imaging systems

Cameras

Clocks

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