Silicon doped with gallium photoconductors: effect of uniaxial stress

C. Meny

doi:10.1117/12.2298231

14 December 1992 Silicon doped with gallium photoconductors: effect of uniaxial stress

C. Meny

Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 192936 (1992) https://doi.org/10.1117/12.2298231
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States

Abstract

Silicon doped with gallium photoconductors have been studied under strong uniaxial stress up to 0.6 GPa for the purpose of extending the spectral response towards longer wavelengths. The stress dependence of the spectral responsivity has been measured by Fourier Transform Spectroscopy measurements. In addition unstressed SiGa photoconductors have been optimized for a balloonborne experiment named AROME.

Citation Download Citation

C. Meny "Silicon doped with gallium photoconductors: effect of uniaxial stress", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 192936 (14 December 1992); https://doi.org/10.1117/12.2298231

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