Paper
15 October 1993 High-density avalanche photodiode array
Ernesto V. Gramsch, Shane X. Zhang, Michael C. Madden, Myron Lindberg, Marek Szawlowski
Author Affiliations +
Abstract
Using bevelled edge avalanche photodiode technology, we have built several two dimensional 64-element arrays. Each pixel measures 1.24 X 1.24 mm2, with no dead space in between . The array was built by thinning and segmenting the back side of a large area APD to form the pixels. Very good isolation is obtained, and the response from each pixel on the back side corresponds to the location and intensity of the input signal on the front side. Signal gain in each pixel is the same as the starting APD, approaching approximately 1000, with good uniformity. The crosstalk between pixels is proportional to the resistance between them, and is dependent on the bias applied to the detector, at high bias, the crosstalk is less than 1%. Because of the small pixel size, the response time to laser excitation approaches approximately 6 ns. These arrays have very good potential for imaging systems and optical fiber readout in high energy physics detectors.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ernesto V. Gramsch, Shane X. Zhang, Michael C. Madden, Myron Lindberg, and Marek Szawlowski "High-density avalanche photodiode array", Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); https://doi.org/10.1117/12.158566
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CITATIONS
Cited by 1 scholarly publication and 3 patents.
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KEYWORDS
Resistance

Avalanche photodetectors

Electrons

Avalanche photodiodes

Photodetectors

Power meters

Sensors

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