Transient photoresponse of an a-Si:H p-i-n photodetector: modeling and analysis

Yi Fang; Richard Y. Kwor; Dashen Shen

doi:10.1117/12.158590

15 October 1993 Transient photoresponse of an a-Si:H p-i-n photodetector: modeling and analysis

Yi Fang, Richard Y. Kwor, Dashen Shen

Proceedings Volume 2022, Photodetectors and Power Meters; (1993) https://doi.org/10.1117/12.158590
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

The transient photoresponse of a hydrogenated amorphous silicon (a-Si:H) p-i-n photodetector has been studied from the circuit analysis point of view. Three possible transient working modes--dc bias mode, continuous light wave mode, and charge-storage mode, were analyzed and the speed, resolution, and accuracy of an 'analog' sensor or sensor array were examined. It is concluded that dc bias mode is the best among the three.

Citation Download Citation

Yi Fang, Richard Y. Kwor, and Dashen Shen "Transient photoresponse of an a-Si:H p-i-n photodetector: modeling and analysis", Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); https://doi.org/10.1117/12.158590

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