Phase shift and loss mechanism of optically excited E-plane electron-hole plasma

Ao Sheng Rong

doi:10.1117/12.2298706

30 November 2017 Phase shift and loss mechanism of optically excited E-plane electron-hole plasma

Ao Sheng Rong

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21047M (2017) https://doi.org/10.1117/12.2298706
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

This paper describes the phase shift and loss mechanism of the optically excited E-plane electron-hole plasma. ForGaAs as the inserted semiconductor, it is shown that an optically sensitive regime occurs, where the phase shift ishighly influenced by the illumination and the peak of the optically induced loss exists. The regime is changed by thedistribution profile of the excess carriers. It is observed that at the high injection light power level, the opticallyexcited plasma behaves as the metallic strip does. The field distributions at the optically excited plasma section are alsodemonstrated, which support the field-displacement effects of the plasma.

Citation Download Citation

Ao Sheng Rong "Phase shift and loss mechanism of optically excited E-plane electron-hole plasma", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21047M (30 November 2017); https://doi.org/10.1117/12.2298706

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