Paper
26 May 1994 Spectroscopic ellipsometry of undulated, bonded silicon-on-insulator structures with oxide-nitride-oxide layers
Magdi Ezzat El-Ghazzawi, Tadashi Saitoh
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Abstract
Undulated bonded silicon-on-insulator structures with oxide/nitride/oxide layers are investigated nondestructively using spectroscopic ellipsometry. Optimum measured information for a wavelength range of 250 to 850 NM has been obtained by using a combination of a lens and nearly 1 mm slit width to minimize the light beam divergence. Using Marquardt regression analysis, slight vertical discrepancy is till observed between measured and calculated data, especially in the wavelength range of 250 to 285 nm due to the still unavoidable existing of beam divergence. This problem affects the accuracy of evaluated layer thicknesses from position to position on the investigated samples, especially the uppermost very thin (1 nm) oxide layer thickness. One interesting result is that because of the observed vertical error in the measured data, we have to avoid in this case making fitting on tan (Psi) and cos (Delta) in order to obtain best calculated data close to the nominal values.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Magdi Ezzat El-Ghazzawi and Tadashi Saitoh "Spectroscopic ellipsometry of undulated, bonded silicon-on-insulator structures with oxide-nitride-oxide layers", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176854
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KEYWORDS
Silicon

Spectroscopic ellipsometry

Oxides

Polarizers

Dielectrics

Semiconducting wafers

Dielectric polarization

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