Physics and simulation of communication lasers

Rudolf F. Kazarinov

doi:10.1117/12.178503

30 June 1994 Physics and simulation of communication lasers

Rudolf F. Kazarinov

Proceedings Volume 2146, Physics and Simulation of Optoelectronic Devices II; (1994) https://doi.org/10.1117/12.178503
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We review some AT&T works on physics of semiconductor lasers, including a method for calculating the electronic states and optical properties of semiconductor quantum structures applicable to bulk, quantum wells, quantum wires, and quantum dot lasers. Two-dimensional numerical simulation of carrier transport in laser structures, which allows calculation of the efficiency of injected carrier consumption by the active region, and the dependence of the laser current on applied voltage are also discussed. Calculations of quantum efficiency and threshold current for bulk InGaAsP lasers are supported by the experimental data.

Citation Download Citation

Rudolf F. Kazarinov "Physics and simulation of communication lasers", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178503

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