High-power and highly reliable operation of all-MOCVD-grown 1.48-um diode lasers

Tadashi Nishimura; Yasuo Nakajima; T. Kimura; Yoshihiro Kokubo; K. Isshiki; Etsuji Omura; Masao Aiga; Kenji Ikeda

doi:10.1117/12.176607

1 June 1994 High-power and highly reliable operation of all-MOCVD-grown 1.48-um diode lasers

Tadashi Nishimura, Yasuo Nakajima, T. Kimura, Yoshihiro Kokubo, K. Isshiki, Etsuji Omura, Masao Aiga, Kenji Ikeda

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176607
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

High output power and long-term stable operation have been realized in all-MOCVD grown 1.48 micrometers buried heterostructure lasers. For the purpose of high power operation, a diode with a cavity length of 1800 micrometers was mounted junction down. This diode shows the maximum output power of 310 mW at 25 degree(s)C, cw. A preliminary aging test is being carried on at a temperature of 50 degree(s)C with a constant light output of 100 mW for the diodes with cavity length of 900 micrometers and junction up configuration. Long-term stable operation over 3000 hrs and the estimated MTTF of 2.4 X 10⁵ hrs at 50 degree(s)C, 100 mW have been realized. As another advantage of the all-MOCVD process, the uniformity of the laser characteristics is also demonstrated. Lasers with a cavity length of 900 micrometers in junction-up configuration are assembled from a processed 2-inch wafer.

Citation Download Citation

Tadashi Nishimura, Yasuo Nakajima, T. Kimura, Yoshihiro Kokubo, K. Isshiki, Etsuji Omura, Masao Aiga, and Kenji Ikeda "High-power and highly reliable operation of all-MOCVD-grown 1.48-um diode lasers", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176607

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