Single epitaxial structure for the integration of lasers with heterojunction bipolar transistors

Anish K. Goyal; Mark S. Miller; Stephen I. Long; Devin Leonard

doi:10.1117/12.176645

1 June 1994 Single epitaxial structure for the integration of lasers with heterojunction bipolar transistors

Anish K. Goyal, Mark S. Miller, Stephen I. Long, Devin Leonard

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176645
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Heterojunction bipolar transistors (HBTs) are capable of producing very high speed digital integrated circuits operating as high as 40 GHz. In this paper we introduce a potentially low cost technique of monolithically integrating in-plane lasers with HBT circuits. A multifunctional epitaxial structure is used which is essentially the same as that for a standard high-speed HBT with modifications made to allow for efficient light amplification. Unlike previous multifunctional epitaxial structures, compromise in the transistor's performance is minimal. The schematic energy band diagrams of the HBT/laser structure biased as an HBT and laser are depicted. Light amplification is achieved by forward biasing the HBT's base- collector junction. The optical gain media is placed in the GaAs collector and consists of strained InGaAs quantum wells (QWs). Under normal HBT operation, the base-collector junction is reverse biased and serves as a sink for electrons which have diffused across the base. To confine electronic carries to the gain region when this junction is forward biased, the subcollector and base consist of a wider bandgap AlGaAs relative to the GaAs collector.

Citation Download Citation

Anish K. Goyal, Mark S. Miller, Stephen I. Long, and Devin Leonard "Single epitaxial structure for the integration of lasers with heterojunction bipolar transistors", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176645

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