Study of correlation between optical characteristics and mirror facet temperature of the active region in high-power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes

Nikolay I. Katsavets; Dmitry Z. Garbuzov; T. A. Grishina; Irena E. Kudrik; Petr V. Pitkianen

doi:10.1117/12.176609

1 June 1994 Study of correlation between optical characteristics and mirror facet temperature of the active region in high-power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes

Nikolay I. Katsavets, Dmitry Z. Garbuzov, T. A. Grishina, Irena E. Kudrik, Petr V. Pitkianen

Author Affiliations +

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176609
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We studied local facet temperature near the active region of high power SCH SQW InGaAsP/GaAs (0.8 micrometers ) and InGaAs/GaAs (0.98 micrometers ) laser diodes (LD) along with their optical and degradational characteristics. It was shown that facet overheating with respect to the bulk temperature of the LD for current densities J < 2000 A/cm² was due to the absorption of intrinsic radiation of the LD and nonradiative recombination of nonequilibrium carriers at the mirror facets, while for J > 2000 A/cm² facet overheating connected with the surface leakage current was observed. Either mechanism may dominate in limiting the maximum optical power as well as increase the degradation rate of the LD.

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Nikolay I. Katsavets, Dmitry Z. Garbuzov, T. A. Grishina, Irena E. Kudrik, and Petr V. Pitkianen "Study of correlation between optical characteristics and mirror facet temperature of the active region in high-power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176609

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