High-finesse silicon Fabry-Perot optical intensity modulator fabricated by merged epitaxial lateral overgrowth

HanChieh Chao; Gerold W. Neudeck

doi:10.1117/12.174990

2 May 1994 High-finesse silicon Fabry-Perot optical intensity modulator fabricated by merged epitaxial lateral overgrowth

HanChieh Chao, Gerold W. Neudeck

Author Affiliations +

Proceedings Volume 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.174990
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Merged ELO (MELO) technology, which is an extension of Selective Epitaxial Growth and Epitaxial Lateral Overgrowth (ELO), was used to develop the c-Si Fabry-Perot cavity fabrication which is compatible with the well developed conventional integrated circuit fabrication techniques. Increased finesse of the Fabry-Perot cavity was accomplished with multi-dielectric layers as high reflection mirrors. Polycrystalline silicon produced from amorphous Si (a-Si) and SiO₂ were then chosen as the high and low index dielectric materials so that fewer number of dielectric pairs are needed to obtain a high reflectance. An optical intensity modulator using MELO technique, was fabricated and evaluated. The maximum modulation depth was measured to be 40% under an injection current density of 16 A/cm². The current density can be made at even lower if the finesse (calculated to be 19.26) of the cavity is further increased. The measured value was 6.8 but if measured with Fourier transform IR spectrometers or by using laser as the lightsource, it could be larger.

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HanChieh Chao and Gerold W. Neudeck "High-finesse silicon Fabry-Perot optical intensity modulator fabricated by merged epitaxial lateral overgrowth", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); https://doi.org/10.1117/12.174990

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