Ultra-thin silicon-on-sapphire for high-density active-matrix liquid crystal display (AMLCD) drivers

Randy L. Shimabukuro; Stephen D. Russell; Bruce W. Offord; Mark A. Handschy; Terry Stuart

doi:10.1117/12.172132

1 April 1994 Ultra-thin silicon-on-sapphire for high-density active-matrix liquid crystal display (AMLCD) drivers

Randy L. Shimabukuro, Stephen D. Russell, Bruce W. Offord, Mark A. Handschy, Terry Stuart

Proceedings Volume 2174, Advanced Flat Panel Display Technologies; (1994) https://doi.org/10.1117/12.172132
Event: IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, 1994, San Jose, CA, United States

Abstract

Single-crystal ultra-thin (< 100 nm) silicon on sapphire (UTSOS) has been fabricated using solid-phase epitaxy and regrowth techniques to produce a high quality semiconductor material on a transparent substrate ideal for active-matrix liquid crystal display (AMLCD) applications. MOS devices fabricated in this material have lower leakages, small thresholds, and higher transconductances than those fabricated in conventional unimproved SOS.

Citation Download Citation

Randy L. Shimabukuro, Stephen D. Russell, Bruce W. Offord, Mark A. Handschy, and Terry Stuart "Ultra-thin silicon-on-sapphire for high-density active-matrix liquid crystal display (AMLCD) drivers", Proc. SPIE 2174, Advanced Flat Panel Display Technologies, (1 April 1994); https://doi.org/10.1117/12.172132

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