Robust and environmentally stable deep UV positive resist: optimization of SUCCESS ST2

Reinhold Schwalm; H. Binder; Thomas Fischer; Dirk J. H. Funhoff; Anne-Marie Goethals; Andreas Grassmann; Holger Moritz; Patrick Jean Paniez; Marijan E. Reuhman-Huisken; Francoise Vinet; Han J. Dijkstra; A. Krause

doi:10.1117/12.175338

16 May 1994 Robust and environmentally stable deep UV positive resist: optimization of SUCCESS ST2

Reinhold Schwalm, H. Binder, Thomas Fischer, Dirk J. H. Funhoff, Anne-Marie Goethals, Andreas Grassmann, Holger Moritz, Patrick Jean Paniez, Marijan E. Reuhman-Huisken, Francoise Vinet, Han J. Dijkstra, A. Krause

Author Affiliations +

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175338
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

By optimization of SUCCESS ST2 an environmentally stable and robust deep UV positive resist has been derived where the generally encountered problems related to chemical amplification resists, the formation of T-tops and linewidth changes during delay have been solved. The previously reported chemistry, protected poly-p-hydroxystyrene and SUCCESS type sulfonium salts, has been proven to be insensitive to airborne contaminations. In this paper the optimization of processing conditions, based on thermal analysis is reported. With the derived conditions linewidth changes during delays could be minimized and excellent performance obtained. At the IBM lithography test center in Boblingen an integrated photosector, consisting of equipment, materials, process and control philosophy, was balanced and 0.25 micrometers pattern can routinely be resolved using an ASM-L DUV stepper (NA 0.5).

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Reinhold Schwalm, H. Binder, Thomas Fischer, Dirk J. H. Funhoff, Anne-Marie Goethals, Andreas Grassmann, Holger Moritz, Patrick Jean Paniez, Marijan E. Reuhman-Huisken, Francoise Vinet, Han J. Dijkstra, and A. Krause "Robust and environmentally stable deep UV positive resist: optimization of SUCCESS ST2", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175338

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