Paper
1 May 1994 Two-dimensional in-situ e-beam intensity profile monitoring method for SEM/EBL test system
Sucheta Gorwadkar, Shashi A. Gangal
Author Affiliations +
Abstract
A phase-lock-in technique is used for direct monitoring of electron beam intensity profile in 2- D in the scanning electron microscope based electron beam lithography system. Faraday cup assembly, modulated ramp generator, and data-acquisition software necessary for beam parameter measurements were developed. The electron beam diameter of 100 angstrom dimension at 50 pA current with the accuracy +/- 24 angstrom was measured. The effect of variation of operating conditions of SEM on the diameter and shape was observed and studied. The set-up developed enables the user to take in-situ measurement and control e-beam parameters.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sucheta Gorwadkar and Shashi A. Gangal "Two-dimensional in-situ e-beam intensity profile monitoring method for SEM/EBL test system", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174132
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KEYWORDS
Electron beams

Scanning electron microscopy

Electron beam lithography

Electron microscopes

Modulation

Optical testing

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