Paper
30 September 1994 Radiation effects on spatial dark current fluctuations in charge coupled devices (CCDs) image sensors
Herve Dias, I. Lefesvre, D. Le Coeur
Author Affiliations +
Abstract
Results on spatial dark current fluctuations in Thomson TH7863 CCD image sensor are presented. The fluctuations have been investigated after irradiations by 90Sr and neutrons (1 MeV) sources. Both ionization and bulk displacement damage are considered. Measured data are compared to predicted values calculated using extreme value statistical analysis. An excellent agreement is found for neutron-induced dark current fluctuations. In contrast, the case of dose-induced dark current fluctuations is more difficult to interpret owing to the lack of an adequate model for interface- state buildup. However, particle-induced damage appears to be the most important contribution to the observed fluctuations. Extension of these results to other types of radiation is discussed in order to assess the radiation response of the TH7863 for a given space flight environment.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Herve Dias, I. Lefesvre, and D. Le Coeur "Radiation effects on spatial dark current fluctuations in charge coupled devices (CCDs) image sensors", Proc. SPIE 2210, Space Optics 1994: Space Instrumentation and Spacecraft Optics, (30 September 1994); https://doi.org/10.1117/12.188105
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KEYWORDS
Charge-coupled devices

Interfaces

Silicon

Oxides

CCD image sensors

Radiation effects

Image sensors

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