Effects of plasma-etching-induced gate oxide degradation on MOSFET's 1/f noise

Chun Hu; Scott T. Martin; Eugene Worley; Joe White; Ray Kjar; Guann-pyng Li

doi:10.1117/12.186741

14 September 1994 Effects of plasma-etching-induced gate oxide degradation on MOSFET's 1/f noise

Chun Hu, Scott T. Martin, Eugene Worley, Joe White, Ray Kjar, Guann-pyng Li

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186741
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Plasma etching degrades the gate oxide in scaled down MOS transistors and therefore affects the device low frequency noise behavior. The effects of plasma etching induced gate oxide damage on MOSFETs 1/f noise have been studied on devices fabricated with different field plate perimeter to gate area ratio antennas on various metal levels. The correlation between plasma etching induced gate oxide damage and device 1/f noise has been observed. The plasma etching introduces oxide trap centers near Si/SiO₂ interface, which give rise to an abnormal shoulder in device 1/f noise spectrum. This is confirmed by reproducing the abnormal noise spectrum on device which initially received less damage during plasma processing by means of performing Fowler-Nordheim stress and forming gas annealing. The correlation between hot-carrier injection degradation and device abnormal 1/f noise was also observed, implying that plasma etching causes abnormal 1/f noise. The physical properties of the traps were studied by the gate bias and temperature dependence of the device 1/f noise.

Citation Download Citation

Chun Hu, Scott T. Martin, Eugene Worley, Joe White, Ray Kjar, and Guann-pyng Li "Effects of plasma-etching-induced gate oxide degradation on MOSFET's 1/f noise", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186741

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