Use of single-event upsets in dynamic random access memories as the basis for a neutron detector

Dimitra G. Darambara; Nicholas M. Spyrou

doi:10.1117/12.204167

3 March 1995 Use of single-event upsets in dynamic random access memories as the basis for a neutron detector

Dimitra G. Darambara, Nicholas M. Spyrou

Proceedings Volume 2339, International Conference on Neutrons and Their Applications; (1995) https://doi.org/10.1117/12.204167
Event: 4th International Conference on Applications of Nuclear Techniques: Neutrons and their Applications, 1994, Crete, Greece

Abstract

Single event upsets (SEUs) can deposit sufficient electrical charge on integrated circuit nodes to initiate logic state reversal without causing any permanent changes in the device. A hardware system employing dynamic random access memories (dRAMs) is being designed and constructed with a view to using it in neutron detection. Having initially proved that dRAMs can be used as heavy charged particle detectors, it was thought that these devices can be made sensitive to neutrons by adding a foil to convert the thermal neutrons to charged particles by making use of the (n,(alpha) ) reaction. A model has been developed to examine the use of possible converters with respect to soft error (SE) generation including those factors that determine the optimum thickness and the efficiency of such a detector.

Citation Download Citation

Dimitra G. Darambara and Nicholas M. Spyrou "Use of single-event upsets in dynamic random access memories as the basis for a neutron detector", Proc. SPIE 2339, International Conference on Neutrons and Their Applications, (3 March 1995); https://doi.org/10.1117/12.204167

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